advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 30v simple drive requirement r ds(on) 6.5m fast switching characteristic i d 75a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.0 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice ap86t03gh/j 75 rohs-compliant product parameter rating drain-source voltage 30 total power dissipation gate-source voltage + 20 continuous drain current 75 continuous drain current 55 pulsed drain current 1 300 storage temperature range operating junction temperature range -55 to 175 -55 to 175 200902262 1 thermal data parameter maximum thermal resistance, junction-ambient (pcb mount) 3 g d s to-252(h) g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-251(j) the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap86t03gj) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 6.5 m ? ? ?
ap86t03gh/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 0.0 2.0 4.0 6.0 8.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =175 o c 10v 7 .0v 6.0v 5.0 v v g =4.0v 0 50 100 150 200 250 0.0 1.0 2.0 3.0 4.0 5.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 6.0v 5.0 v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =45a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 4 6 8 10 12 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized v gs(th) (v)
ap86t03gh/j fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =15v v ds =18v v ds =24v 0 1000 2000 3000 4000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90%
|
